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Thickness Dependence of the Electrical Properties of CuNi Thin Film Resistors Grown on AlN Substrates for II-Type Attenuator Application

机译:II型衰减器应用在AlN衬底上生长的CuNi薄膜电阻器电性能的厚度依赖性

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摘要

The CuNi films grown on A1N substrates at 100 deg C by dc magnetron co-sputtering were investigated as a function of the film thickness. The crystallmity and grain size of the films decrease with decreasing the thickness. The sheet resistance of the films increases with decreasing the thickness and 50 nm thick CuNi films exhibit a sheet resistance of 11 OMEGA/square suitable for 2 dB Tl-type attenuator. The positive TCR values increase with decreasing film thickness and they are influenced by not crystallinity but substrate below a critical thickness.
机译:研究了通过直流磁控管共溅射在100°C的AlN衬底上生长的CuNi膜与膜厚的关系。膜的结晶度和晶粒尺寸随着厚度的减小而减小。膜的薄层电阻随着厚度的减小而增加,并且50nm厚的CuNi膜表现出适用于2dB Tl型衰减器的11Ω/平方的薄层电阻。 TCR的正值随膜厚的减小而增加,并且不受结晶度的影响,而受临界厚度以下的基材的影响。

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