From our study on copper electroless deposition, we have successfully controlled selective copper growing only in vias and trenches of TiN/SiO_2 /Si and Ta/SiO_2 /Si substrates by adapting the accelerating and inhibiting effects of additives and modulating the condition of palladium activation. 2,2'-Dipyridyl and polyethylene glycol play a significant role of inhibitor and accelerator, which contributed to the selective growing during the electroless deposition process. Furthermore, we found that the postcleaning conditions of deionized water rinsing and N_2 blowing after Pd activation also strongly affects the topographical selectivity of copper growing in our electroless deposition.
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