Silylation Using a Supercritical Carbon Dioxide Medium to Repair Plasma-Damaged Porous Organosilicate Films

摘要

Supercritical CO_2 (SCCO_2) was used to facilitate silylation in repairing oxygen plasma-induced damage during photoresist stripping in porous organosilicate films. Samples with open and closed-pore morphologies prepared by sacrificial-porogen approach were exposed to O_2 plasma to simulate damage. These samples were pretreated with 10 percent butanol in SCCO_2 (wt/wt) and were silylated with 10 percent trimethylchlorosilane in SCCO_2 (wt/wt). The results showed that this technique was effective in repairing plasma damage in films with open-pore morphology but was less effective in closed-pore films. However, the surface hydropho-bicity for both films was recovered after treatment.