Silicon Nanowires by Aluminum-Induced Crystallization of Amorphous Silicon

摘要

This paper discusses controlled studies on the effect of stress on the formation of silicon nanowires (SiNWs) produced by aluminum-induced crystallization (AIC) of plasma-enhanced chemical vapor deposited amorphous silicon (a-Si:H). The impact of stress on the growth of SiNWs was completely decoupled from other factors such as a-Si:H and Al deposition parameters and rapid thermal annealing conditions. This study shows, that AIC of a-Si:H can be used to fabricate SiNWs through the combination of rapid thermal annealing and stress adjustment.