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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Communication-Realization of DC Bias Reliability by 7-Zone JTE Termination Technology
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Communication-Realization of DC Bias Reliability by 7-Zone JTE Termination Technology

机译:通过7区JTE端接技术实现通信的直流偏置可靠性

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摘要

A graded junction termination extension (JTE) is proposed to suppress the variation of avalanche voltages for SiC power devices. A 7-zone JTE was investigated to realize the concept of the graded JTE. Avalanche voltages higher than 3,880 V were expected in the range of interface charge densities from 0 to 8.0 x 10(12) cm(-2). Both breakdown voltages higher than 4,000 V and bias stability after a 1,000 hr stress test were successfully achieved. (C) 2016 The Electrochemical Society. All rights reserved.
机译:为了抑制SiC功率器件的雪崩电压变化,提出了一种分级结终端扩展(JTE)。研究了一个7区JTE,以实现分级JTE的概念。在0至8.0 x 10(12)cm(-2)的界面电荷密度范围内,预计会出现高于3,880 V的雪崩电压。成功实现了高于4,000 V的击穿电压和1,000小时的应力测试后的偏置稳定性。 (C)2016年电化学学会。版权所有。

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