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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Effect of Uniaxial Strain on Low Frequency Raman Modes in Few Layers Molybdenum Disulfide
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Effect of Uniaxial Strain on Low Frequency Raman Modes in Few Layers Molybdenum Disulfide

机译:单轴应变对几层二硫化钼低频拉曼模的影响

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The effect of uniaxial tensile strain on the shear mode (C mode) and layer breathing mode (LB mode) of few layers MoS2 were studied. The C mode is doubly degenerated into two sub-peaks as applied strain increases. No measurable Raman shift for the LB mode is observed, while its Raman intensity decreases gradually as the strain increases. In addition, the C and LB modes exhibit distinguished thickness dependence. The C mode shows a clear blueshift as the strain increases, while the LB mode is softened in the process. Moreover, the evolution of C mode with thickness follows an enhanced linear-chain model plus a linear component very well. It implies that the C mode is a better thickness navigator as compared to the L mode. (C) 2016 The Electrochemical Society. All rights reserved.
机译:研究了单轴拉伸应变对少量MoS2层的剪切模式(C模式)和层呼吸模式(LB模式)的影响。随着施加应变的增加,C模式会双重退化为两个亚峰。 LB模式未观察到可测量的拉曼位移,而其拉曼强度随应变增加而逐渐降低。此外,C和LB模式显示出明显的厚度依赖性。当应变增加时,C模式显示出明显的蓝移,而LB模式在此过程中变软。而且,C模式随厚度的演变遵循增强的线性链模型加上线性成分的效果非常好。这意味着与L模式相比,C模式是更好的厚度导航器。 (C)2016年电化学学会。版权所有。

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