首页> 外文期刊>ECS Journal of Solid State Science and Technology >Supercritically-Dried Porous Silicon Powders with Surface Areas Exceeding 1000 m(2)/g
【24h】

Supercritically-Dried Porous Silicon Powders with Surface Areas Exceeding 1000 m(2)/g

机译:表面积超过1000 m(2)/ g的超临界干燥多孔硅粉

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Porous silicon micro-particulates have been harvested after electrochemical anodization of lightly-doped p-type silicon wafers in hydrofluoric acid electrolyte containing sulfuric acid as an additive. Post-anodization, significantly higher internal surface areas per unit mass have been realized by utilizing super-critical drying with CO2 solvent instead of air-drying, with up to 1125 m(2)/g being achieved. Correspondingly higher pore volumes are also evident (> 1 cm(3)/g) and, with average pore diameters ranging between 3-4 nm, a higher micropore content is made accessible. It is proposed that the improvements achieved through super-critical drying indicate that the higher density of micropores expected from the choice of wafer resistivity and electrolyte composition (their presence being confirmed through analysis of the adsorption-desorption isotherms) is facilitated through a higher degree of integrity being maintained within the etched pore structure during electrolyte removal. (C) 2015 The Electrochemical Society. All rights reserved.
机译:在轻度掺杂的p型硅晶片在含有硫酸作为添加剂的氢氟酸电解质中进行电化学阳极氧化处理之后,已经收获了多孔硅微粒。阳极氧化后,通过使用CO2溶剂进行超临界干燥而不是风干,已经实现了单位质量内表面积的显着提高,最高可达1125 m(2)/ g。相应地,更高的孔体积也很明显(> 1 cm(3)/ g),并且平均孔径在3-4 nm之间,因此可以得到更高的微孔含量。提出通过超临界干燥实现的改进表明,通过更高程度的脱硫可以促进晶片电阻率和电解质组成的选择所期望的更高密度的微孔(通过对吸附-解吸等温线的分析来确认其存在)。在去除电解质期间,在蚀刻的孔结构内保持完整性。 (C)2015年电化学学会。版权所有。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号