Ion-beam assisted exfoliation of thin single crystalline layers of 4H-SiC may facilitate heterogeneous integration of SiC devices with silicon CMOS circuits, and lead to lower cost SiC power devices. Practical device structures require H~+ ion implantation and wafer bonding in order to achieve transfer of crystalline layers to new handle substrates. However, for initial optimization of the exfoliation step it is sufficient to monitor surface blistering as a function of ion implantation parameters and the subsequent thermal annealing conditions. In this study we show that for 1 μm thick 4H-SiC exfoliated films, there is an optimum implantation dose of ~ 6 x 10~(16) cm~(-2) as well as an optimum implantation temperature of ~ 300℃. Some exploratory data for 500 keV and 1 MeV implant energies are also shown.
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机译：离子束辅助的4H-SiC薄单晶层剥落可促进SiC器件与硅CMOS电路的异质集成，并导致成本更低的SiC功率器件。实际的器件结构需要H +离子注入和晶圆键合，以实现将晶体层转移到新的操作衬底上。然而，对于剥落步骤的初始优化，足以监测表面起泡作为离子注入参数和随后的热退火条件的函数。本研究表明，对于厚度为1μm的4H-SiC剥离膜，最佳注入剂量为〜6 x 10〜（16）cm〜（-2），最佳注入温度为〜300℃。还显示了500 keV和1 MeV注入能量的一些探索性数据。
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