Investigation of N Type Metal TiAlC by Thermal Atomic Layer Deposition Using TiCl4 and TEA as Precursors

摘要

N type metal gate TiAlC film was grown by thermal atomic layer deposition (ALD) technique using titanium tetrachloride (TiCl4) and triethylaluminum (TEA) as precursors for the first time. The physical characteristics of the TiAlC film such as chemical composition, growth rate and crystal morphology were estimated by X-ray photoemission spectroscopy, X-ray reflectivity and X-ray diffraction, respectively. The electrical characteristics of the TiAlC films were investigated by using metal-oxide-semiconductor (MOS) capacitor structure. The effective workfunction can be tunable from 4.46 eV to 4.24 eV by adjusting the growth temperature and the film thickness. The effective workfunction of 4.24 eV is close to the Si conduction band edge. These results show that the TiAlC film is a promising gate metal candidate for the application in FinFET device of 22 nm technology node and beyond. (C) 2016 The Electrochemical Society. All rights reserved.