Reflector Influence on Rapid Heating of Minimal Manufacturing Chemical Vapor Deposition Reactor

摘要

A small-sized reactor for producing a silicon epitaxial film on a half-inch silicon wafer was studied, taking into account the heat transport near the wafer. The wafer temperature slowly changed over a long time period when the reflector was made of thick plates. In contrast, when thin plates were employed as the reflector material, the wafer temperature quickly increased and easily reached a steady state. Thus, the reactor parts set near the wafer should be small, slim and thin. With the help of wafer rotation and a highly heat-conductive susceptor, a symmetrical and uniform silicon epitaxial film thickness profile could be obtained. (C) The Author(s) 2016. Published by ECS. All rights reserved.