Stable Performance of Chemically Deposited Antimony Sulfide-Lead Sulfide Thin Film Solar Cells under Concentrated Sunlight

摘要

Thin film solar cells of FTO/CdS/Sb2S3/C-Ag or FTO/CdS/Sb2S3/PbS/C-Ag prepared via chemical deposition of thin films of CdS (100 nm), Sb2S3 (200 - 400 nm) and PbS (110 or 220 nm) on transparent conductive oxide of SnO2: F (FTO) are presented. These cells are stable under concentrated sunlight of intensity of up to 10 kW/m(2). The optical bandgap of Sb2S3 thin films is 1.57-1.83 eV and of the PbS thin film, 1.03-1.40 eV. The photoconductivity of Sb2S3 is 5.8 x 10-7 Omega(-1) cm(-1) (n-type); of PbS thin films it is 10(-2) Omega(-1) cm(-1) (p-type); and of CdS film it is 2 x 10(-3) Omega(-1) cm(-1). The addition of PbS thin film in the cells notably improves the open circuit voltage (V-oc), short circuit current (J(sc)) as well as the energy conversion efficiency (eta) of these cells. Under sunlight, V-oc is 438 mV, J(sc) is 1.38 mA/cm(2) and. is 0.12% for a FTO/CdS/Sb2S3(400 nm)/C-Ag cell; and 578 mV, 8.61 mA/cm(2) and 1.34%, for a FTO/CdS/Sb2S3(400 nm)/PbS(220 nm)/C-Ag cell. Under 4 kW/m(2), V-oc is 581 mV, J(sc) is 3.55 mA/cm(2) and. is 0.10% for the FTO/CdS/Sb2S3(400 nm)/C-Ag cell; and 611 mV, 23.54 mA/cm(2) and 0.89%, respectively, for the FTO/CdS/Sb2S3 (400 nm)/PbS(220 nm)/C-Ag cell. Through the measurement methodology described for evaluating the performance of the cells, we establish that these cells remain stable under concentrated as well as steady-state solar radiation. (C) 2015 The Electrochemical Society. All rights reserved.