Noncontact Monitoring of Activation and Residual Damage of Dual Implanted Silicon Using Room Temperature Photoluminescence

摘要

Phosphorous (P+ 1.0 MeV, 4.0 x 10(13) cm(-2)) and boron (B+ 10 keV, 3.0 x 10(14) cm(-2)) implanted p(-)-Si(100) wafers were annealed with awide range of annealing conditions (350-800 degrees C, 60-150 s) in a commercially available hot wall-based, rapid thermal annealing (RTA) system. Significant variations in sheet resistance were observed in different RTA conditions. Secondary ion mass spectroscopy (SIMS) P and B depth profiles did not show significant change. Room temperature photoluminescence (RTPL) spectra were measured from all wafers under two different excitation wavelengths (650 and 785 nm). RTPL spectra showed large variations in intensity and wavelength distribution corresponding to the sheet resistance. (C) The Author(s) 2015. Published by ECS.