Comparative Studies on InAlAs/InGaAs MOS-MHEMTs with Different Compressive/Tensile-Strained Channel Structures

摘要

Comparative studies of double 5-doped InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistors (MOS-MHEMTs) with different compressive-strained and tensile-strained channel structures have been made. In addition to the strain engineering of the heterostructure, the MOS-gate design is also integrated by using the cost-effective H_2O_2 oxidization technique. The tensile (compressive)-strained channel is devised by the Ino.52Alo.48As/Ino.41Gao.59 As (Ino.52Alo.48As/Ino.63Gao.37 As) heterostructure. Device characteristics with respect to different channel structures are physically studied. The impact-ionization-related kink effects in MHEMTs are significantly suppressed by the MOS-gate. Atomic force microscopy (AFM) and low-frequency noise (LFN) analysis were used to study the surface roughness and interface quality. As compared to the compressive-strained MOS-MHEMT and conventional Schottky-gate devices, the present tensile-strained MOS-MHEMT design has demonstrated improved transconductance gain (g_m), current drive, intrinsic voltage gain (Ay), and power performance.