Transparent and Flexible Thin Film Transistors with Solution-Based Chalcogenide Materials

摘要

The fabrication and characterization of optically transparent high performance photolithography-based cadmium sulfide (CdS) thin film transistors (TFT) on polymeric and glass substrates using chemical bath deposition (CBD) is reported. The process utilizes a maximum processing temperature of 115℃, which is compatible with most flexible substrates. The extracted mobility for the fabricated CdS-TFTs ranged from ~10-18 cm~2/V-s with a threshold voltage of ~1.6-4.8 V and I_(on)/I_(off) ratio of ~10~7. This carrier mobility is among the highest reported for a fully patterned TFT fabricated with CdS as semiconductor and the first transparent CdS-TFTs built on a flexible substrate with good optical transparency and excellent mechanical flexibility.