Ultrathin RTP oxynitride dielectrics on planar, trench and three dimensional structures

摘要

Single step in situ ultrathin (5-12 nm) rapid thermal processing (RTP) silicon. oxynitride dielectrics were fabricated on silicon and polysilicon planar and 3-D capacitor structures with sub- 0.5μm dimensions. Physical and electricalcharacterization results show that these ultrathin dielectrics are especially compatible for high density dynamic random access memory (DRAM) devices with 3-D stacked capacitors with sub-0.25μm narrow fingered orifices.