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Yb5In2Sb6: A new rare earth zintl phase with a narrow band cap

机译:Yb5In2Sb6:具有窄带帽的新型稀土zintl相

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The new Zintl phase Yb5In2Sb6 was obtained from a direct element combination reaction in a sealed graphite tube at 700 degreesC and its structure was determined. It crystallizes in the orthorhombic space group Pbam (No. 55), in the Ba5Al2Bi6 structure type, with a unit cell of a = 7.3992(5) Angstrom, b = 23.001(6) Angstrom, c = 4.5139(4) Angstrom, and Z = 2, Yb5In2Sb6 has a one-dimensional structure with infinite anionic double chains (In2Sb6)(10-) separated by Yb2+ ions. Each single chain is made of corner-sharing InSb4 tetrahedra. Two such chains are bridged by Sb-2 groups to form double chains 1/infinity [In2Sb610-]. The compound satisfies the classical Zintl concept and is a narrow gap semiconductor. Band structure calculations suggest an direct band gap. Polycrystalline ingots of Yb5In2Sb6 showed electrical conductivity of 100 S/cm and a Seebeck coefficient of similar to +30 mu V/K at room temperature. The thermal conductivity of Yb5In2Sb6, is about 1.7 W/mK in the temperature range of 150-300 K. (C) 2000 Academic Press. [References: 40]
机译:通过在700℃下在密封石墨管中的直接元素结合反应获得新的Zintl相Yb5In2Sb6,并确定了其结构。它在Ba5Al2Bi6结构类型的正交晶体空间群Pbam(No. 55)中结晶,其晶胞为a = 7.3992(5)埃,b = 23.001(6)埃,c = 4.5139(4)埃和Z = 2,Yb5In2Sb6具有一维结构,具有被Yb2 +离子隔开的无限阴离子双链(In2Sb6)(10-)。每条单链由角共享InSb4四面体制成。两个这样的链由Sb-2基团桥接形成双链1 /无限[In2Sb610-]。该化合物满足经典的Zintl概念,是一种窄间隙半导体。带结构计算表明存在直接带隙。 Yb5In2Sb6的多晶锭在室温下的电导率为100 S / cm,塞贝克系数类似于+30μV / K。 Yb5In2Sb6在150-300 K的温度范围内的热导率约为1.7 W / mK。(C)2000 Academic Press。 [参考:40]

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