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Polymer-based Zero-Level Packaging Technology for High Frequency RF Applications by Wafer Bonding/Debonding Technique Using an Anti-Adhesion Layer

机译:通过使用抗粘附层的晶圆键合/去键合技术的高频射频应用的基于聚合物的零级封装技术

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摘要

This paper describes polymer cap 0-level packaging of RF devices, which is based on successive wafer scale bonding and debonding techniques. Pre-fabricated benzocyclobutene (BCB) membranes on a carrier wafer were directly transferred onto a target substrate by wafer scale bonding process. Using an anti-adhesion layer of hydrophobic octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM), the carrier wafer was mechanically detached from the membranes without any aggressive etching process. As a result, BCB packaging caps in various sizes have been successfully fabricated on a 3 inch Si substrate. BCB cap deformation by thermal residual stress was investigated using ANSYS simulation and the measured results were in good agreement with the simulated ones. Si_3N_4 film was deposited on the caps for hermetic sealing and the hermeticity was evaluated by N_2 leak test. Finally, the suitability of BCB caps in RF applications was assessed by S-parameter measurement of gold coplanar waveguide (CPW) transmission lines. The insertion loss change by BCB packaging was negligible and the return loss was better than 20 dB from DC to 50 GHz.
机译:本文介绍了基于连续晶圆级键合和解键合技术的RF设备的聚合物封盖0级封装。通过晶圆规模键合工艺将载体晶圆上的预制苯并环丁烯(BCB)膜直接转移到目标基板上。使用疏水性十八烷基三氯硅烷(OTS)自组装单层(SAM)的防粘层,无需任何积极的蚀刻工艺即可将载体晶圆从膜上机械剥离。结果,已经成功地在3英寸Si衬底上制造了各种尺寸的BCB包装盖。利用ANSYS仿真研究了残余应力对BCB盖变形的影响,测量结果与仿真结果吻合良好。将Si_3N_4膜沉积在盖上以进行气密密封,并通过N_2泄漏测试评估气密性。最后,通过金共面波导(CPW)传输线的S参数测量来评估BCB帽在RF应用中的适用性。 BCB封装的插入损耗变化可以忽略不计,从DC到50 GHz的回波损耗优于20 dB。

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