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首页> 外文期刊>International Journal of Modern Physics, C. Physics and Computers >Electronic properties of a hydrogenic impurity in a quantum wire with v-shaped cross-section: Spin-orbit coupling, relativistic Correction and conductance
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Electronic properties of a hydrogenic impurity in a quantum wire with v-shaped cross-section: Spin-orbit coupling, relativistic Correction and conductance

机译:具有v形横截面的量子线中氢杂质的电子性质:自旋轨道耦合,相对论校正和电导

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摘要

The effects of spin-orbit coupling (SOC) and relativistic correction (RC) on the energy levels of a hydrogenic impurity in a GaAs/Ga1xAlxAs quantum wire are studied. The quantum wire has a V-shaped cross-section and the impurity located in its center. Our numerical calculations have done using a variational procedure within the effective mass approximation. Our results show that (i) the splitting due to the SOC decreases with increasing the wire width, (ii) the SOC and RC increase when the concentration increases, (iii) the SOC is zero for l = 0 (l is angular momentum) and nonzero for l 6= 0, (iv) for a given wire width, the RC is different for l = 0 and l = 1 due to expectation values of 1 r and 1 r2 (r is distance between the electron and impurity). We also computed the conductance of the quantum wire with and without impurity.
机译:研究了自旋轨道耦合(SOC)和相对论校正(RC)对GaAs / Ga1xAlxAs量子线中氢杂质能级的影响。量子线的横截面为V形,杂质位于其中心。我们的数值计算是在有效质量近似值范围内使用变分程序完成的。我们的结果表明(i)随着线宽的增加,SOC导致的分裂减少;(ii)浓度增加时SOC和RC增加;(iii)当l = 0时SOC为零(l为角动量)当l 6 = 0时为非零;(iv)对于给定的线宽,由于期望值为1 r和1 r2(r是电子与杂质之间的距离),RC对于l = 0和l = 1是不同的。我们还计算了有杂质和无杂质时量子线的电导率。

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