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In-situ diagnosis and control of crystal growth process by means of electric potentials

机译:通过电势原位诊断和控制晶体生长过程

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The paper discussed a possibility of using new approaches for in-situ diagnosis growth processes of large crystals as well as solving some specific problems of controlling them. They are based on the current monitoring of changes in the differences of electric potential between growing crystals and crystallization medium. It is obvious that this monitoring reflects such important crystallization processes as accumulation of charge at the crystal interface and electric screening of it, growth of concentration of subphase formation at the interface (later, inclusions), current change in the mass crystallization rate, etc. This change in the rate suggests a new concept of automation of crystal growth processes, based on minimization of the difference in the current and initially predetermined change in Deltaphi through inversely-related adjustment of the temperature of crystallization medium. We have experimentally substantiated the possibility of using various outer electric potentials for modification of processes in a double electric layer at the interface and extension of growth period under fairly favorable conditions. The system of low-temperature phase of barium metaborate crystal and molten solution as crystallization medium was taken for a model one. [References: 15]
机译:本文讨论了使用新方法对大晶体生长过程进行原位诊断以及解决一些控制它们的具体问题的可能性。它们基于对生长中的晶体与结晶介质之间电势差变化的电流监控。显然,这种监测反映了重要的结晶过程,例如晶体界面处电荷的积累和对其进行电屏蔽,界面处子相形成浓度的增长(后,夹杂物),质量结晶速率中的电流变化等。速率的这种变化提出了晶体生长过程自动化的新概念,其基础是通过反向相关地调节结晶介质温度来使电流变化和初始预定的Deltaphi变化之差最小。我们已经通过实验证实了在相当有利的条件下,可以使用各种外部电势来修改双电层界面处的工艺以及延长生长周期的可能性。以偏硼酸钡晶体与熔融溶液为结晶介质的低温相体系为模型一。 [参考:15]

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