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首页> 外文期刊>International Journal of Modern Physics, B. Condensed Matter Physics, Statistical Physics, Applied Physics >Local order and magnetic field effects on the electronic properties of disordered binary alloys in the quantum the percolation limit
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Local order and magnetic field effects on the electronic properties of disordered binary alloys in the quantum the percolation limit

机译:局域和磁场对无序二元合金在渗流极限中的电子性质的影响

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摘要

Electronic properties of disordered binary alloys are studied via the calculation of the average Density of States (DOS) in two and three dimensions. We propose a new approximate scheme that allows for the inclusion of local order effects in finite geometries and extrapolates the behavior of infinite systems following finite-size scaling ideas. We particularly investigate the limit of the Quantum Site Percolation regime described by a tight-binding Hamiltonian. This limit was chosen to probe the role of short range order (SRO) properties under extreme conditions. The method is numerically highly efficient and asymptotically exact in important limits, predicting the correct DOS structure as a function of the SRO parameters. Magnetic field effects can also be included in our model to study the interplay of local order and the shifted quantum interference driven by the field. The average DOS is highly sensitive to changes in the SRO properties and striking effects are observed when a magnetic field is applied near the segregated regime. The new effects observed are twofold: there is a reduction of the band width and the formation of a gap in the middle of the band, both as a consequence of destructive interference of electronic paths and the loss of coherence for particular values of the magnetic field. The above phenomena are periodic in the magnetic flux. For other limits that imply strong localization, the magnetic field produces minor changes in the structure of the average DOS.
机译:通过计算二维和三维平均态密度(DOS),研究了无序二元合金的电子性能。我们提出了一种新的近似方案,该方案允许在有限的几何图形中包含局部顺序效应,并根据有限尺寸的缩放思想外推无限系统的行为。我们特别研究了由紧密结合的哈密顿量描述的量子位点渗流机制的极限。选择此限制是为了探索极端条件下短程订单(SRO)属性的作用。该方法在数值上是高效的,并且在重要的范围内渐近精确,可以根据SRO参数预测正确的DOS结构。磁场效应也可以包含在我们的模型中,以研究局部秩序和磁场驱动的位移量子干扰之间的相互作用。平均DOS对SRO特性的变化高度敏感,并且在隔离区域附近施加磁场时会观察到明显的撞击效果。观察到的新影响是双重的:由于电子路径的破坏性干扰以及特定磁场强度的相干性损失,带宽减小并且在带中间形成了间隙。 。上述现象在磁通量中是周期性的。对于暗示强定位的其他限制,磁场会在平均DOS的结构中产生较小的变化。

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