Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe

摘要

The paper presents research results of the admittance of metal-insulator-semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/HgTe/HgCdTe quantum wells (QW) in the surface layer of the semiconductor structure. The thickness of a quantum well was 5.6 nm, and the composition of barrier layers with the thickness of 35 nm was close to 0.65. Measurements were conducted in the range of temperatures from 8 K to 200 K. It is shown that, for structures with quantum well based on HgTe capacitance, conductance oscillations in the strong inversion are observed. These oscillations are related to the recharging of quantum levels in HgTe.