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首页> 外文期刊>International journal of nanoscience >INFLUENCE OF TUNGSTEN CONTENT IN W-DLC NANOCOMPOSITE THIN FILMS PREPARED BY HYBRID TARGET BIASED ION BEAM ASSISTED DEPOSITION TECHNIQUE
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INFLUENCE OF TUNGSTEN CONTENT IN W-DLC NANOCOMPOSITE THIN FILMS PREPARED BY HYBRID TARGET BIASED ION BEAM ASSISTED DEPOSITION TECHNIQUE

机译:钨靶复合离子束辅助沉积技术制备的W-DLC纳米复合薄膜中的钨含量

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摘要

Tungsten incorporated diamond like carbon nanocomposite films were deposited onto Si substrate by using target biased ion beam assisted deposition. The effect of W target bias voltage on the chemical bonding, structure, surface morphology and mechanical properties of DLC films were investigated by means of XPS, Raman spectroscopy, AFM and Nanoindentation. It was found that the content of W in the films increased from 6 at.% to 13.7 at.% due to the increase in target bias voltage from -300 V to -700 V. XPS analysis revealed that most of the tungsten starts to react with carbon to form WC nanoparticles. Raman analysis shows that with the increase of W fraction in the DLC matrix, the intensity ratio I_D/I_G, increases and the G band shifts to higher wavenumber. Thus it proves that the incorporation of tungsten leads to increase in sp~2 hybridized carbon content, and hence decrease in the hardness of W-DLC films compared to that of the pure DLC films. The result of AFM indicates that the surface roughness of the DLC gets modified with the incorporation of tungsten.
机译:通过使用目标偏置离子束辅助沉积,将掺钨的类金刚石碳纳米复合材料薄膜沉积到Si衬底上。利用XPS,拉曼光谱,AFM和纳米压痕技术研究了W靶偏压对DLC薄膜化学键合,结构,表面形貌和力学性能的影响。发现由于目标偏置电压从-300 V增加到-700 V,薄膜中的W含量从6 at。%增加到13.7 at。%。XPS分析表明,大多数钨开始反应与碳形成WC纳米粒子。拉曼分析表明,随着DLC矩阵中W分数的增加,强度比I_D / I_G增大,G波段移至更高的波数。因此,证明了钨的掺入导致sp〜2杂化碳含量的增加,因此与纯DLC膜相比,W-DLC膜的硬度降低。 AFM的结果表明,DLC的表面粗糙度随着钨的掺入而改变。

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