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机译:离子束辅助沉积技术在不同离子束电流下制备的铟锡氧化物薄膜
Departamento de Fisica, Institute Superior de Engenharia do Porto, Rua Dr. Antonio Bernardino de Almeida, 431, 4200-072 Porto, Portugal Centro de Fisica, Universidade do Minho, 4700 Braga, Portugal Center of Optical Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, P.R. China;
Center of Optical Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, P.R. China;
Centro de Fisica, Universidade do Minho, 4700 Braga, Portugal;
CeFITec, Universidade Nova de Lisboa/Departamento de Fisica, Universidade de Evora, Portugal;
atomic force microscopy (AFM); thin film structure and morphology; other inorganic semiconductors; other semiconductors; other semiconductors; ion and electron beam-assisted deposition; ion plating;
机译:离子束能量对离子束辅助沉积制备的铟锡氧化物薄膜性能的影响
机译:离子束辅助沉积技术研究丙烯酸亚基上铟锡氧化物薄膜的沉积
机译:通过低能氧离子束辅助沉积制备的铟锡氧化物薄膜的结构,电学和光学性质
机译:通过反应电子束蒸发技术制备的用于控制EMI的氧化铟薄膜的性能
机译:利用分子束外延研究低位错密度氮化镓薄膜的离子束辅助沉积。
机译:离子束辅助沉积外延GaN薄膜
机译:离子束辅助沉积技术在不同离子束电流下制备的铟锡氧化物薄膜