Simulation, modelling and characterisation of quasi-ballistic transport in nanometer sized field effect transistors: from TCAD to atomistic simulation

摘要

In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects transistors or carbon nanotubes-based emerging devices. After presenting the context of nanodevice simulation, the focus will be made on the limits for ballistic transport in these several types of nanodevices.