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Straight-sided, buckling-driven delamination of thin films at high stress levels

机译:在高应力水平下,直边屈曲驱动的薄膜分层

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摘要

The fracture mechanics of a straight-sided, thin film delamination at stress levels, which are high compared to the stress required to initiate the delamination is investigated. Buckling at a bifurcation point of the delaminated region, resulting from incompletely relieved stresses in this region, is analysed by a semi- analytical approach for delaminations of infinite extent. The results are compared to numerical predictions based on finite element calculations for finite sized delaminations. The finite element calculations are carried out in the post-buckling regime showing that parts of the crack front will close as a result of bifurcation buckling, while other parts will experience enhanced energy release rate and mode I stress intensity factor. The mode III stress intensity factor is shown to be negligible at the stress levels analysed.
机译:研究了在应力水平下,与开始分层所需的应力相比,高应力的直边薄膜分层的断裂力学。由于该区域应力不完全缓解而导致的分层区域分叉处的屈曲,通过半解析方法对无限范围的分层进行了分析。将结果与基于有限元分层的有限元计算的数值预测进行比较。在后屈曲状态下进行有限元计算,结果表明,由于分叉屈曲,裂纹前沿的部分将闭合,而其他部分将经历增强的能量释放速率和I型应力强度因子。模式III的应力强度因子在分析的应力水平下可以忽略不计。

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