Influence of Technological Parameters on Properties of MOSFETs

摘要

The field-effect transistors are always among the omnipresent electronic components in our daily life, they play a very important part in new technology. They reside in the middle of the revolution which carried a great part of technological development of very high level. In the frame of our work, we are interested in the study of the field effect transistor metal oxide semiconductor called MOSFET. After analytical studying the component static characteristics, according to different operation regimes, a numerical simulation was worked out. The influence of technological dimensions (L, Z, a, and Nd) was studied. The obtained results allow us to determine optimal parameters of the devices from the view point of their applications and specific use.