A method for determining the ambipolar diffusion length and carrier lifetime in GaAs p-i-n diodes

摘要

It was determined that the forward loss resistance as a function of the radius of the active region of typical microwave p-i-n diodes depends on the ratio of the square of the ambipolar-diffusion length to the square of the radius of the diode active region. Based on this regularity, a method was developed that provides simple determination of the ambipolar-diffusion length and the carrier lifetime.