Simulation of diffusion-drift transport of charge carriers in silicon microstrip detectors

摘要

A diffusion-drift transport of charge carriers in a silicon microstrip detector, which operates in the full-depletion mode, is simulated. The dependences of the carrier temperature, mobility, and diffusion coefficient on the electric field strength in the detector bulk are taken into account. The spatial distribution of the collected charge for various bias and depletion voltages is obtained. The calculation results agree well with the experimental data. The objective of this simulation is to use it for calculating the spatial resolution of microstrip detectors and optimizing their design.