The Dielectric Properties for Yttrium Doped SBT Thin Films Prepared by Sol-Gel Method

摘要

In this work, Sr_(0.5)Ba_(0.5)Ti_(1-z)Y_zO_3 (SBT) thin films were prepared on a Pt/SiO_2/Si substrate by sol-gel process. The microstructures of SBT thin films were examined by IR, XRD and TEM. The influences of Y on the microstructure and dielectric properties of Sr_(0.5)Ba_(0.5)Ti_(1-z)Y_zO_3 thin films were studied. It is found that tetragonal perovskite crystal grains existed in SBT thin films. Increasing Y doping has a clear effect on the grain size of SBT. It is found that the proper Y doping content decreases dielectric loss for SBT thin films.