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Polarization Change of PZTN Ferroelectric Thin Films Under Uniform In-Plane Tensile Stress

机译:平面内均匀拉应力下PZTN铁电薄膜的极化变化

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We applied uniform in-plane tensile stress on PZTN ferroelectric thin films of 130 nm in thickness, using a four-point bending test rig and measured the corresponding changes in polarization and leakage current. An initial polarization hysteresis loop, which is different from the repeatable one after repetitive loadings, was observed. In the range of the tensile stress we applied (up to 150 MPa), the remnant polarization decreased linearly in reference to the repeatable hysteresis at a rate of approx 0.002 mu C cm~(-2)MPa~(-1) which is more than two orders smaller than that of bulk PZT materials. The corresponding coercive voltage increased very little (< 0.02V), but the leakage current at small voltages showed a sudden increase during the loading process, changing from an ohmic behaviour (n = 1) when the stress is < 53 MPa to a sub-linear one (n = 0.4) for I ~ V~n when the stress is > 109MPa.
机译:我们使用四点弯曲试验台在厚度为130 nm的PZTN铁电薄膜上施加了均匀的面内拉应力,并测量了极化和漏电流的相应变化。观察到了初始极化磁滞回线,该循环不同于重复加载后的可重复性。在我们施加的拉应力范围内(最高150 MPa),相对于可重复的磁滞,残余极化线性降低,速率约为0.002μC cm〜(-2)MPa〜(-1),更大。比散装PZT材料小两个数量级。相应的矫顽电压几乎没有增加(<0.02V),但是在加载过程中,小电压下的泄漏电流突然增加,从应力<53 MPa时的欧姆行为(n = 1)变为低于当应力> 109 MPa时,I〜V〜n呈线性线性(n = 0.4)。

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