Microstructere and Dielectric Properties-of Nd-doped Bismuth Titanate

摘要

Bi_(3.15)Nd_(0.85)Ti_3O_(12) (BNdT) thin films were prepared on Pt(100)/Ti/SiO_2/Si(100) substrate by sol-gel process. Perovskite crystalline was observed in the thin films achieved, and the grain size of the thin film was about 200 nm in diameter with sharp and clear boundaries between different films and the Pt electrodes. Well-saturated polarization-voltage (P-V) switching curves were examined in the BNdT thin films. The remnant polarization and the coercive field of the BNdT thin films annealed at 750 deg C were 43 mu C/cm~2 and 66 kv/cm at an applied voltage of 8v, respectively. The dielectric constant and the dissipation factor were 583 and 0.07 respectively, measured at 100 KHz.