Dielectric and Tunable Properties of B_(0.96)Ca_(0.04)Ti_(0.84)Zr_(0.16)O_3 (BCTZ) on MgO and SiO_2/Si substrates

摘要

Mg doped Ba_(0.96)Ca_(0.04)Ti(0.84)Zr_(0.16)O_3 (BCTZ) thin film was fabricated on Pt/MgO and Pt/Ti/SiO_2/Si substrates by spin-on metal-organic decomposition (MOD) method. The films were annealed in a furnace at temperatures in the range of 600-900 deg C for about an hour in flowing oxygen environment. X-ray diffraction (XRD) analysis shows the formation of perovskite phase with grain size less than 100 nanometer. Increasing in annealing temperature resulted in better crystallinity of the films. BCTZ films on Pt/MgO substrates show significantly higher dielectric constant and tenability over Pt/Ti/SiO_2/Si substrates without significant difference in dissipation factors. Post annealing the films in oxygen environment resulted in significant for these films.