DIELECTRIC AND ROOM TEMPERATURE TUNABLE PROPERTIES OF Mg-DOPED Ba_(0.96) Ca_(0.04) Ti_(0.84)Zr_(0.16)O_3 THIN FILMS on Pt/MgO

摘要

Mg- doped Bao.96 Ca_(0.04)Ti_(0.84) Zr_(0.16)O_3 (BCTZ) thin films were fabricated on Pt/MgO substrate by metallorganic decomposition method. The structures of the films were analyzed by x-ray diffraction. The electrical measurements were performed on metal-ferroelectric-metal capacitors with platinum as the top and bottom electrode. The dielectric properties were improved after the capacitors were post annealed at 700℃ in oxygen atmosphere for 30 min. A high dielectric constant of 504 and a dissipation factor of less than 4% was obtained at 1 MHz. The Pt/BCTZ/Pt/MgO capacitors exhibited high tunability of 55% at an applied field of 55 kV/cm.