GaAs devices and circuits for terahertz applications

摘要

GaAs diodes are used as mixer and multiplier elements throughout the terahertz frequency range. This is primarily because the technology is well-understood, convenient to use and supplies adequate performance for most applications. GaAs Schottky diodes are the mixer element of choice for terahertz applications where the added expense of cryogenic superconductive (SIS) or hot electron bolometric (HEB) mixers is not warranted. Furthermore, GaAs (and InP) multiplier diodes, used in conjunction with millimeter wave oscillators, are presently the best available technology for generating terahertz power from solid-state sources. In this paper, we will first review the status of terahertz diode technology with emphasis on the recent results which define the cutting edge of diode performance. We will then discuss the improvements that are needed to ensure that this technology not only meets the expanding needs of scientific researchers, but also is extended to future military and commercial applications.