Analysis and Design of Millimeter-Wave FET-Based Image Reject Mixers

摘要

In this paper, wave analysis is applied to a field-effect transistor (FET)-based image reject mixer (IRM) in order to enhance the classical IRM theory and investigate the fundamental limitations in terms of conversion loss ($L_{ C}$) and image rejection ratio (IRR). Furthermore, it is also described how different FET technologies can be benchmarked versus each other regarding their suitability for use in resistive mixers. This benchmarking allows the designer to predict the performance, i.e., $L_{ C}$, of resistive mixers based on dc measurements, which facilitate the use of the presented method early in the design process.