Effect of inversion layer and oxide layer thickness on the performance of PX-Si TFT devices

摘要

In the present paper, the dependence of transfer characteristics of PX-Si TFT devices on gate oxide thickness (t_(ox)) and inversion layer thickness (t_(si)) has been investigated theoretically by considering a new Gaussian energy distribution of GB trapping states. The dependence of drain current (I_D) and GB space charge potential barrier height (q ~V _g) of PX-Si TFT on gate voltage (V_(GS)) at different inversion layer thickness q~V _g, and oxide layer thickness has also been studied. It is observed that the drain current increases on decreasing the thickness of oxide layer and inversion layer.