Processing and Characterization of Nanostructured ZnO/Al-doped ZnO Multilayer Films

摘要

Multilayer films (single layer of ZnO, ZnS and Al doped ZnO film, double layer of ZnO/AI doped ZnO film & triple layer film of ZnO/AI doped ZnO/ZnO and ZnO/AI doped ZnO/ZnS film) were deposited on soda-lime glass substrate by electroless process. Wet deposited films were dried in air and subsequently annealed in muffle furnace in air atmosphere at 500°C for 2 hr. Significant characteristics of the films, such as crystallinity, surface roughness as well as the optical properties in a spectral range between 300-800 nm were analyzed. Average grain size of the films was found 40-90 nm. The obtained sample of triple layer film of ZnO/AI doped ZnO/ZnS exhibits best, optimum optical characteristics i.e. intermediate range of absorbance of spectra, lowest value of photoluminescence intensity, and has minimum recombination of electron-hole pairs. Triple layer film of ZnO/AI doped ZnO/ZnS is suitable as a transparent substrate in Dye-sensitized solar cell.