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Spin-Hall effect of collimated electrons in zinc-blende semiconductors

机译:闪锌合半导体中准直电子的自旋霍尔效应

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摘要

We describe an intrinsic spin-Hall effect (SHE) in n-type bulk zinc-blende semiconductors with a topological origin. When a collimated flux of electrons is injected into a zinc-blende semiconductor with Dresselhaus spin-orbit interaction, a nontrivial gauge structure appears in the momentum ((k) over right arrow-) space of the electrons. The Berry Curvature of this gauge field and the corresponding Lorentz force in (k) over right arrow -space results in a finite SHE. The value of the spin-Hall current is found to be highly dependent on the degree of electron collimation, which may be varied by means of gate electrodes. Therefore, the system may potentially be useful as an electronically controllable Source of pure spin-current for spintronic applications.
机译:我们描述具有拓扑起源的n型块状闪锌矿半导体中的固有自旋霍尔效应(SHE)。当将经过准直的电子通量注入具有Dresselhaus自旋轨道相互作用的闪锌矿型半导体中时,电子的动量((k)在右箭头上方)会出现非平凡的轨距结构。该标尺场的贝里弯曲度和右箭头空间上方(k)中的相应洛伦兹力导致有限的SHE。发现自旋霍尔电流的值高度依赖于电子准直度,该准直度可以通过栅电极来改变。因此,该系统可能潜在地用作自旋电子应用的纯自旋电流的电子可控源。

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