Determination of the Optimal Initial States for Multiple-Run RAM Testing

摘要

The present article considers the problem of testing modern RAM with the use of multiple-run march tests and discusses ways of increasing their efficiency through the use of optimal combinations of initial memory states. The values of the optimality characteristics of sets of initial states for two-, three-, and four-run RAM testing are determined. Numerical estimates of these characteristics along with experimental data that confirm their functional capacity are presented.