首页> 外文期刊>New Journal of Chemistry >Facile synthesis and size-dependent optical properties of luminescent Znln2S4 nanocrystals derived from metal xanthates
【24h】

Facile synthesis and size-dependent optical properties of luminescent Znln2S4 nanocrystals derived from metal xanthates

机译:金属黄原酸盐发光Znln2S4纳米晶的简易合成及尺寸依赖性光学性质

获取原文
获取原文并翻译 | 示例

摘要

Znln2S4 (ZIS), a ternary semiconductor with photo-absorption in the visible region of the solar spectrum, is a promising active material for catalysis, optoelectronics and photoconductors and exists in various morphologies. Synthesis of phase-pure ZIS nanocrystals (NCs) devoid of any binary or biphasic impurities is highly necessary for device applications. The present investigation deals with facile synthesis of hexagonal phase ZIS spherical NCs by thermolysis of tris isopropylxanthate of indium and bis isopropylxanthate of zinc in oleylamine (OAm) at 280 °C for different durations (10, 15 and 20 min). The crystal structure, phase purity, elemental composition, morphology and band gap of the as-synthesized ZIS NCs were thoroughly evaluated by powder X-ray diffraction (pXRD), Raman, energy dispersive X-ray spectroscopy (EDS), electron microscopy tools and diffuse reflectance spectroscopy (DRS), respectively. The size-dependent optical band gap and emission maximum were tuned in the range of 3.18 to 2.40 eV and 440 to 528 nm by adjusting the reaction time from 10 to 20 minutes. Size-dependent quantum yields (QYs) in the range of 7-11 have been achieved for these NCs. Lifetime measurements performed on these samples show lifetimes in the range of 1.3-1.5 ns for the fast-decaying component and 5.7-7.3 ns for the slow decaying component.
机译:Znln2S4(ZIS)是一种在太阳光谱可见光区域具有光吸收作用的三元半导体,是一种很有前途的催化、光电子和光导体活性材料,并且以多种形貌存在。合成不含任何二元或双相杂质的相纯ZIS纳米晶体(NCs)对于器件应用是非常必要的。本研究涉及通过在280 °C下在油胺(OAm)中热解铟的三异丙基黄原酸酯和锌的双异丙基黄原酸酯在油胺(OAm)中不同持续时间(10、15和20 min)来轻松合成六方相ZIS球形NCs。采用粉末X射线衍射(pXRD)、拉曼光谱、能量色散X射线光谱(EDS)、电子显微镜工具和漫反射光谱(DRS)等手段对ZIS NCs的晶体结构、相纯度、元素组成、形貌和带隙进行了全面评价。通过将反应时间调整为10至20 min,将尺寸相关的光学带隙和发射最大值调整在3.18至2.40 eV和440至528 nm范围内。这些NC的尺寸相关量子产率(QY)在7-11%的范围内,对这些样品进行的寿命测量显示,快速衰减组分的寿命范围为1.3-1.5 ns,慢衰减组分的寿命范围为5.7-7.3 ns。

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号