Spin-Dependent Chemical Processes on and near the Surface of Semiconductors Induced by Sunlight

摘要

A new concept of photochemical processes on the surface of semiconductors is proposed, taking into account spin effects. It is shown that spin photochemistry unites nonlinear phenomena of the combined effect of photons on atomic processes the course of which depends on the spin symmetry. These phenomena are illustrated by models of the bombardment of a silicon surface (both flat and fractal) by hydrogen atoms, taking into account the flip-flop spin exchange modified by absorbed photons. The classification of possible models of spin photochemistry for this system is carried out.