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Effective collision strengths for electron impact excitation of Si VIII

机译:Si VIII电子碰撞激发的有效碰撞强度

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摘要

Effective collision strengths for electron-impact excitation of the nitrogen-like ion Si VIII are presented over the wide range of electron temperatures log T(K) = 4.0-6.5. All 231 fine-structure transitions among the 22 fine-structure levels arising from the lowest 11 LS target states (2s(2)2p(3), 2s2p(4), 2p(5), and 2s(2)2p(2)3s) are considered in the tabulation. The collision strengths are evaluated in a multi-channel R-matrix approach, and the corresponding effective collision strengths are obtained by averaging these over a Maxwellian distribution of electron velocities. Comparisons are made with recent distorted-wave results at high incident electron energies. Differences of up to 20% are found, particularly for some allowed transitions. (C) 2003 Elsevier Inc. All rights reserved. [References: 22]
机译:在大范围的电子温度log T(K)= 4.0-6.5范围内,显示了类似氮的离子Si VIII的电子碰撞激发的有效碰撞强度。由最低的11个LS目标状态(2s(2)2p(3),2s2p(4),2p(5)和2s(2)2p(2)引起的22个精细结构级别中的所有231个精细结构转换列表中考虑了3s)。在多通道R矩阵方法中评估了碰撞强度,并且通过在电子速度的麦克斯韦分布上对它们进行平均来获得相应的有效碰撞强度。比较了在高入射电子能量下最新的畸变波结果。发现差异高达20%,尤其是对于某些允许的过渡。 (C)2003 Elsevier Inc.保留所有权利。 [参考:22]

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