Magnesium Oxide Films as Temperature Sensor

摘要

Mg oxide thin films, with thermal sensitivity superior to Pt thin films; were fabricated through annealing of Mg films deposited by r.f. magnetron sputtering. The annealing was carried out in the temperature range of 500-700 °C under atmospheric conditions. Resistivity of the resulting Mg oxide films were in the range of 1.7x10~7 μΩ-cm/°C to 2.81X10~(12) uΩ-cm/°C, depending on the extent of Mg oxidation. The temperature coefficient of resistance (TCR) of the MgO films also depended on the extent of Mg oxidation: The average TCR of MgO resistors, measured between 0 and 2'00°C; were 7630x10~2ppm/°C for the 500°C and 2988x102ppm/°C for 650 °C respectively. Because of their high resistivity and linear TCR, MgO thin films are superior to pure Pt thin films for flow and temperature sensor applications.