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Diode-pumped 214.8-nm Nd:YAG/Cr~(4+):YAG microchip laser system for the detection of NO

机译:二极管泵浦214.8 nm Nd:YAG / Cr〜(4 +):YAG微芯片激光系统用于NO的检测

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摘要

A passively Q-switched 214.8-nm Nd:YAG/Cr~(4+):YAG microchip laser system for the detection of NO was designed, constructed, and tested. The system uses the fifth harmonic of the 1.074-μm transition in Nd:YAG to detect NO by laser-induced fluorescence. A significant challenge was the development of an environmentally stable coating to provide the necessary discrimination between the 1.074-μm laser line and the stronger transition at 1.064 μm. The exact position of the fifth-harmonic frequency was determined by use of NO fluorescence excitation spectra to be 46556±1.5cm~(-1). With a pulse energy of approximately 50 nJ of fifth-harmonic light, we observed a detection sensitivity for NO of approximately 15 parts per billion by volume in a simple, compact optical system.
机译:设计,构建和测试了被动调Q开关的214.8nm Nd:YAG / Cr〜(4 +):YAG微芯片激光系统。该系统使用Nd:YAG中1.074-μm跃迁的五次谐波通过激光诱导的荧光检测NO。一项重大挑战是开发一种环境稳定的涂层,以在1.074-μm激光线和1.064μm处的更强跃迁之间提供必要的区分。利用NO荧光激发光谱确定了第五谐波频率的确切位置为46556±1.5cm〜(-1)。利用大约50 nJ的第五谐波光的脉冲能量,我们观察到在简单,紧凑的光学系统中对NO的检测灵敏度约为十亿分之15体积。

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