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机译:纳米级径向pn结的调查如果在self-catalyzed砷化镓纳米线生长(111)
Univ Lyon, INSA Lyon, CNRS, INL,UMR 5270, F-69621 Villeurbanne, France;
Univ Lyon, Ecole Cent Lyon, CNRS, INL,UMR 5270, F-69134 Ecully, France;
Off Natl Etud & Rech Aerosp, DMPH Dept Phys & Instrumentat, Chatillon, FranceUniv Paris Saclay, Univ Paris Sud, CNRS, C2N,UMR 9001, 8 Ave Vauve, F-91120 Palaiseau, France;
electrical parameter; Radial; NanowireElectric lossesAutocatalysisElectron beam induced currentgallium arsenidesSchottky barriersMolecular beam epitaxy;
机译:Passivation efficacy study of Al2O3 dielectric on self-catalyzed molecular beam epitaxially grown GaAs1-x Sb (x) nanowires
机译:Self-catalyzed InAs nanowires grown on Si: the key role of kinetics on their morphology
机译:Arsenic vapor pressure dependence of light emission of lateral p-n junction diode with GaAs/AlGaAs grown by MBE
机译:GaAs // ITO / Si Junction中GaAs薄层// ITO接口的硬X射线光电子能谱评估
机译:使用射频电浆辅助化学束磊晶成长氮化铟磊晶材料于表面氮化处理矽(111)基板之研究 =Investigation of Epi-InN Materials Grown on Surface Nitride Si (111) Substrate by RF-CBE
机译:通过Au辅助分子束外延生长后的GaAs(111)纳米线和Si(111)衬底之间的晶格参数调节
机译:在Si(111)上生长的自催化GaAs纳米线中径向P-N结的纳米级研究
机译:低电负性叠层和增强的半导体氧化:si(111)和Gaas(110)表面上的sm