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A solution-processed pillar5arene-based small molecule cathode buffer layer for efficient planar perovskite solar cells

机译:5芳烃solution-processed支柱小高效分子阴极缓冲层平面钙钛矿的太阳能电池

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摘要

A room-temperature solution-processed pillar5arene-based small molecule material, termed C3, has been designed, synthesized, and incorporated between a conventional PCBM electron transport layer (ETL) and a metal electrode to function as a single-layer cathode buffer layer (CBL) for efficient planar p-i-n perovskite solar cells (PVSCs). It has been found that C3 has a work function tunneling effect, which can decrease the work function of the Ag electrode; therefore, introduction of C3 successfully enhances the interface contact and reduces the interface barriers, which usually exist between fullerene derivatives and metal electrodes. It was also found that the C3 capping layer could improve the surface quality of PCBM, forming a smooth, dense and pinhole-free morphology with fewer surface defects. Thus, C3 can modify the interface between PCBM and Ag, enhance the diode properties of devices and facilitate electron transport through the devices; therefore, it is a very promising CBL material for PVSCs. A device with a hybrid PCBM ETL and a single cathode buffer layer of C3 exhibited a high power conversion efficiency (PCE) of 17.42 with negligible hysteresis, which was dramatically higher than that of a device based on a pure PCBM ETL. With the major advantages of a low-temperature solution process and interface modification, the excellent PCE of PVSCs on flexible substrates can exceed 13. These results demonstrate that solution-processed pillar5arene-based small molecule materials can serve as high performance CBLs in PVSCs.
机译:一个室温solution-processed支柱[5]芳烃小分子物质,称为C3,设计、合成和结合传统之间PCBM电子传输层(ETL)和一个金属电极作为单层阴极缓冲层(CBL)高效的平面p i n钙钛矿太阳能细胞(PVSCs)。功函数隧穿效应,可以减少Ag)电极的功函数;因此,成功引入C3增强了界面接触,减少了之间的界面障碍,通常存在富勒烯衍生物和金属电极。还发现,C3覆盖层可以吗提高PCBM的表面质量,形成一个光滑、致密和pinhole-free形态表面缺陷少。之间的接口PCBM Ag),提高二极管设备和促进电子的性质通过设备运输;非常有前途的CBL PVSCs材料。混合PCBM ETL和单个阴极缓冲层C3表现出高功率转换效率(PCE)的17.42%忽略磁滞,巨大的变化高于基于纯PCBM设备ETL。低温过程和接口的解决方案修改,优秀的PCE PVSCs灵活的基质可以超过13%。证明solution-processed支柱[5]芳烃小分子材料作为高性能cbl PVSCs。

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