Intrinsic energy dissipation in CVD-grown graphene nanoresonators

摘要

We utilize classical molecular dynamics to study the quality (0-factors of monolayer CVD-grown graphene nanoresonators. In particular, we focus on the effects of intrinsic grain boundaries of different orientations, which result from the CVD growth process, on the Q-factors. For a range of misorientation angles that are consistent with those seen experimentally in CVD-grown graphene, i. e. 0° to ~20°, we find that the Q-factors for graphene with intrinsic grain boundaries are 1-2 orders of magnitude smaller than that of pristine monolayer graphene. We find that the Q-factor degradation is strongly influenced by both the symmetry and structure of the 5-7 defect pairs that occur at the grain boundary. Because of this, we also demonstrate that the Q-factors of CVD-grown graphene can be significantly elevated, and approach that of pristine graphene, through application of modest (1%) tensile strain.