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Wide Bandgap Semiconductor Update

机译:宽禁带半导体更新

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Power Electronics News checked in with sixteen power semiconductor manufacturers to see what’s up for wide bandgap semiconductors. According to its findings, Wolfspeed, a Cree company, for example, expects Silicon Carbide (SiC) to become more mainstream as the power electronics industry transitions away from silicon in the next five years. SiC enables electric vehicles to drive a longer distance on the same charge and makes the onboard chargers smaller and more efficient, with lower system costs. Additionally, offboard fast DC charging stations are more efficient and higher-power-capable. SiC transforms vehicle electrification, says Wolfspeed. Power Electronics News also expects SiC to take more automotive ground away from the traditional silicon semiconductor suppliers. According to GaN Systems, the automotive industry has accepted Gallium Nitride (GaN)-powered products: “Much like GaN burst into the charger market, 2021 will see the emergence of GaN Audio in the automotive audio segment.” Texas Instruments (TI) sees huge potential for high-voltage GaN, which it says doubles output power capacity while decreasing the total cost of ownership in automotive applications. TI recently introduced the industry’s first automotive GaN FET with integrated driver, pro tection and active power management for use in onboard chargers.
机译:电力电子与十六个新闻检查功率半导体制造商看看宽禁带半导体。其调查结果,Wolfspeed Cree公司,例子中,预计碳化硅(SiC)电力电子行业主流转换从硅在未来5年。在相同的电荷,使更长的距离车载充电器更小、更高效降低系统成本。直流充电更高效higher-power-capable。电气化,Wolfspeed说。电子消息也预计SiC采取更多汽车从传统硅半导体供应商。系统,汽车工业已经接受了氮化镓(GaN)驱动的产品:”像GaN冲进充电器市场,2021年看到GaN音频在汽车的出现音频段。”高压氮化镓潜力,它说双打输出功率能力而减少汽车的所有权的总成本应用程序。行业首个汽车GaN场效应晶体管集成驱动、时代潮流下和有功功率管理用于车载充电器。

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