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首页> 外文期刊>Proceedings of the Society for Experimental Mechanics >Out-of-Plane CTE Measurement Method for Freestanding Thin Films
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Out-of-Plane CTE Measurement Method for Freestanding Thin Films

机译:平面外CTE测量方法独立式的薄膜

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摘要

An out-of-plane linear coefficient of thermal expansion (CTE) measurement method was developed to overcome the difficulty in measuring the in-plane deformation of freestanding thin films with a thickness of less than 1 μm. The out-of-plane profile measurement was relatively easy with the added advantage of simplicity, easy specimen preparation, and a simple test setup. White light interferometry was used for determining the out-of-plane thermal deformation as a function of temperature. Two types of supporting substrates, silicon and ZERODUR, were used to account for the substrate effect on the CTE measurement. Attempts were made to fit the measured profiles using several peak functions and then find the optimal one. The test procedures were demonstrated using a freestanding 530-nm-thick aluminum film that was used in a previous in-plane measurement method. The calculated CTE value of this aluminum film was 23.7 ppm/℃, which was in good agreement with the in-plane measurement result. The out-of-plane CTE measurement method incorporating a zero CTE substrate was shown to be the most convenient and straightforward method.
机译:热的出平面线性系数扩张(CTE)测量方法被开发在测量克服困难平面独立薄膜的变形的厚度小于1μm。出平面剖面测量相对容易和简单性的优势,容易样品制备,和一个简单的测试设置。白光干涉法用于确定出平面热变形作为温度的函数。支持基板、硅和ZERODUR用于账户的基质效应CTE测量。使用几个峰函数测量资料然后找到最佳的一个。使用一个独立的程序了530 - nm厚铝用于电影先前的平面测量方法。CTE值计算的铝膜23.7 ppm /℃,这是在良好的协议平面测量结果。测量方法将零CTE衬底被证明是最方便的简单的方法。

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