机译:Highly-Doped, Highly-Strained锗和肖特基电致发光二极管
Institut d'Electronique Fondamentale, CNRS-Universite Paris Sud, F-91405 Orsay, France;
Optical properties; Schottky; Room temperatureantimonyEnvironmental TemperatureElectricityTensile strainMolecular beam epitaxyelectroluminescent diode;
机译:基于GaN Nanorod Schottky-Diode的光电探测器的电流 - 电压特性和深度研究
机译:研究$ beta mathbf { - } { mathbf {ga}} _ { mathbf {ga}} _ { mathbf {}} _ { mathbf {3的效果 $ Schottky Diode PhotoDetectors
机译:基于Si-MOSFET / SI-DIODE,SIC-JFET / SIC-SCOTTKY二极管和GAN晶体管/ SIC-SCHOTTKY DIODE电源装置的非隔离直流降压转换器的比较设计与性能研究
机译:Investigation on the Electrochemical Performance of the Silicon and Germanium Based Lithium-Ion Batteries =硅基与锗基锂离子电池的电化学性能研究
机译:平面Al-Schottky结对钻石中单个NV中心的有源电荷状态控制
机译:基于小型金属聚合物外壳的Carbidremium Diodes Schottky的特性计算
机译:magneto-schottky-Diode集成电路